[Introduction]
• Secure worldwide No. 1 high efficiency & low heat GaN bare chip design technology
• Thermal Temperature monitoring allowing live confirmation of reliability
• High efficiency GaN based optimum chip designed to pioneer next generation mobile communication
• GaN based amplifier and components are increasing in demand as core components in radar and mobile communication industries
[Features]
• Provide wide band gap(3.4 eV) and high breakdown voltage, low impedance, instant switching speed
• High internal pressure and heat resistant with large saturation transmission speed allowing low power
and high efficiency component recognition
• High Efficiency
• High Power
• Thermal Monitoring possible (Self-healing supported)
• Customized possible
• 12-15V applications possible (PAE/OUTPUT 5~15% reduced)
[Applications]
• LTE/LTE-A base-station
• S-band phased-array radar
• Wireless communications, Military communications